? die datasheet gb01sht06-cau ? feb 2015 http://www.genesicsemi .com/high-temperature-sic/hi gh-temperature-sic-bare-die/ ? pg 1 of 4 ? high temperature silic on carbide power schottky diode features ? 650 v schottky rectifier ? 210 c maximum operating temperature ? zero reverse recovery charge ? superior surge current capability ? positive temperature coefficient of v f ? temperature independent switching behavior ? lowest figure of merit q c /i f ? available screened to mil-prf-19500 die size = 0.9 mm x 0.9 mm advantages applications ? high temperature operation ? improved circuit efficiency (lower overall cost) ? low switching losses ? ease of paralleling devices without thermal runaway ? smaller heat sink requirements ? industrys lowest reverse recovery charge ? industrys lowest device capacitance ? ideal for output switching of power supplies ? best in class reverse leakage cu rrent at operating temperature ? ? geothermal instrumentation ? solenoid actuators ? general purpose high-temperature switching ? amplifiers ? solar inverters ? switched-mode power supply (smps) ? power factor correction (pfc) maximum ratings at t j = 210 c, unless othe rwise specified parameter symbol conditions values unit repetitive peak reverse voltage v rrm 650 v continuous forward current i f t c = 25 c, r thjc = 9.52 2.5 a continuous forward current i f t c 190 c, r thjc = 9.52 0.75 a rms forward current i f ( rms ) t c 190 c, r thjc = 9.52 1.3 a surge non-repetitive forward current, half sine wave i f,sm t c = 25 c, t p = 10 ms 10 a non-repetitive peak forward current i f,max t c = 25 c, t p = 10 s 65 a i 2 t value i 2 dt t c = 25 c, t p = 10 ms 0.5 a 2 s power dissipation p tot t c = 25 c, r thjc = 9.52 24 w operating and storage temperature t j , t stg -55 to 210 c electrical characteristics at t j = 210 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. diode forward voltage v f i f = 0.75 a, t j = 25 c 1.4 v i f = 0.75 a, t j = 210 c 2.3 reverse current i r v r = 650 v, t j = 25 c 1 5 a v r = 650 v, t j = 210 c 5 50 total capacitive charge q c i f i f,max di f /dt = 200 a/s t j = 210 c v r = 400 v 7 nc switching time t s v r = 400 v < 17 ns total capacitance c v r = 1 v, f = 1 mhz, t j = 25 c 76 pf v r = 400 v, f = 1 mhz, t j = 25 c 12 v r = 650 v, f = 1 mhz, t j = 25 c 12 v rrm = 650 v i f @ 25 o c = 2.5 a q c = 7 nc ?
? die datasheet gb01sht06-cau ? feb 2015 http://www.genesicsemi .com/high-temperature-sic/hi gh-temperature-sic-bare-die/ ? pg 2 of 4 ? figures: figure 1: typical forward characteristics figure 2: typical reverse characteristics figure 3: typical junction capacitance vs reverse voltage characteristics figure 4: typical capacitive energy vs reverse voltage characteristics
? die datasheet gb01sht06-cau ? feb 2015 http://www.genesicsemi .com/high-temperature-sic/hi gh-temperature-sic-bare-die/ ? pg 3 of 4 ? mechanical parameters die dimensions 0.9 x 0.9 mm 2 a node pad size 0.64 x 0.64 die area total / active 0.81/0.36 die thickness 360 m wafer size 100 mm flat position 0 deg die frontside passivation polyimide a node pad metallization 400 nm ni + 200 nm au backside cathode metallization 400 nm ni + 200 nm au die attach electrically conduc tive glue or solder wire bond au 76 m reject ink dot size 0.3 mm recommended storage environment store in original cont ainer, in dry nitrogen, < 6 months at an ambient temperature of 23 c chip dimensions: die a [mm] 0.9 b [mm] 0.9 metal c [mm] 0.64 d [mm] 0.64 wire bondable e [mm] 0.6 f [mm] 0.6
? die datasheet gb01sht06-cau ? feb 2015 http://www.genesicsemi .com/high-temperature-sic/hi gh-temperature-sic-bare-die/ ? pg 4 of 4 ? revision history date revision comments supersedes 2015/02/09 1 inserted mechanical parameters 2012/04/03 0 initial release published by genesic semiconductor, inc. 43670 trade center place suite 155 dulles, va 20166 genesic semiconductor, inc. res erves right to make changes to t he product specifications and dat a in this document without not ice. genesic disclaims all and any warranty and liability arising ou t of use or application of any product. no license, express or implied to any intellectual property rights is granted by this document. unless otherwise expressly indicated, genesic products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons syst ems, nor in applications where their failure may result in deat h, personal injury and/or property damage.
? die datasheet gb01sht06-cau sep 2013 http://www.genesicsemi.c om/high-temperature-sic/hi gh-temperature-sic-bare-die/ ? page 1 of 1 ? ? spice model parameters this is a secure document. please copy this code from the spice model pdf file on our website (http://www.genesicsemi.com/images/ hit_sic/baredie/schottky/gb0 1sht06-cau_spice.pdf) into ltspice (version 4) software for simulation of the gb01sht06-ca u. * model of genesic semiconductor inc. * * $revision: 1.0 $ * $date: 05-sep-2013 $ * * genesic semiconductor inc. * 43670 trade center place ste. 155 * dulles, va 20166 * * copyright (c) 2013 genesic semiconductor inc. * all rights reserved * * these models are provided "as is, where is, and with no warranty * of any kind either expressed or implied, including but not limited * to any implied warranties of merchantability and fitness for a * particular purpose." * models accurate up to 2 times rated drain current. * * start of gb01sht06-cau spice model * .subckt gb01sht06 anode kathode d1 anode kathode gb01sht06_25c; call the schottky diode model d2 anode kathode gb01sht06_pin; call the pin diode model .model gb01sht06_25c d + is 3.57e-18 rs 0.49751 + trs1 0.0057 trs2 2.40e-05 + n 1 ikf 322 + eg 1.2 xti 3 + cjo 9.12e-11 vj 0.371817384 + m 1.527759838 fc 0.5 + tt 1.00e-10 bv 650 + ibv 1.00e-03 vpk 650 + iave 1 type sic_schottky + mfg genesic_semiconductor .model gb01sht06_pin d + is 5.73e-11 rs 0.72994 + n 5 ikf 800 + eg 3.23 xti -14 + fc 0.5 tt 0 + bv 650 ibv 1.00e-03 + vpk 650 iave 1 + type sic_pin .ends * * end of gb01sht06-cau spice model
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